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The study of defects in single GaN nanorod

In this article, we report the study of defects between single and bulk GaN nanorods in temperature dependence. High quality of GaN nanorods have been investigated by £g-photoluminescence. Optical properties and surface morphology have been analyzed by a series of measurements, including field-emission electron microscopy (FESEM), and cathodoluminescence (CL). CL data reveal that the intensity of surface state emission is larger than near-band-edge emission at 20K . The 3.21eV peak reveals the structural defect at GaN/Si interface. The surface state emission from bottom is larger than top.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0819110-150937
Date19 August 2010
CreatorsLee, Guan-Hua
ContributorsYung-Sung Chen, Li-Wei Tu, Min-Hsiung Tsai, Der-Jun Jang
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0819110-150937
Rightsnot_available, Copyright information available at source archive

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