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Molecular beam epitaxy of gallium indium nitride arsenide for optoelectronic devices /

Thesis (Ph. D.)--University of Texas at Austin, 2000. / Vita. Includes bibliographical references (leaves 100-110). Available also in a digital version from Dissertation Abstracts.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/48909350
Date January 2000
CreatorsGotthold, David William,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceDigital version accessible at:

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