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Investigation of deep level impurities (oxygen and chromium) in bulk gallium arsenide and Au-GaAs Schottky diodes.

Thesis--University of Florida. / Description based on print version record. Typescript. Vita. Bibliography: leaves 71-72.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/506551552
Date January 1973
CreatorsHuang, Chern I.,
PublisherGainesville, FL,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

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