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Understanding the impact of bulk traps on GaN HEMT DC and RF characteristics

Thesis (Ph. D. in Electrical Engineering)--Vanderbilt University, May 2009. / Title from title screen. Includes bibliographical references.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/319706302
Date January 2009
CreatorsKalavagunta, Aditya.
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
TypeElectronic dissertations.

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