The main purpose of this thesis is to study on Galvanic electrochemical etch stop using Au/Si/TMAH formation and tries to find out the conditions that we make micro-structure should need.
Through the formation of Au/Si/TMAH, the wafer which have PN junction etch in TMAH, P type Si would be etched and N type Si would be protected. This mechanism improves the following problem¡G(1) the stress problem that due to the heavily boron-doped etch stop; (2) the non-batch fabrication and thermal stress problem that electrochemical etch stop have to use external bias and holder protection.
We use TMAH as an etchant. Its advantages are¡G(1) compatible with the COMS process, (2)adding the specific additive that can increase the selectivity of aluminum, even non-etch. The application of this research will be more elasticity.
Finally, for testing and verifying the feasibility of the parameters, author applied the designing conditions to fabricate the beam structure.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0901104-031619 |
| Date | 01 September 2004 |
| Creators | Cheng, Chi-Hau |
| Contributors | Yuan-Fang Chou, Chien-Hsiang Chao, Cheng-Tang Pan |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0901104-031619 |
| Rights | not_available, Copyright information available at source archive |
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