Return to search

GaN Epitaxy on Melt Grown Thermally Prepared Bulk ZnO Substrates

Different methods were developed for the preparation of bulk ZnO substrates. Remarkable improvement on the surface, optical and crystalline quality of the bulk ZnO substrate was achieved. ZnO substrates with an atomically flat surface exhibiting terrace-like features were used as a substrate for GaN grown by MBE. High-resolution x-ray diffraction and low temperature PL results show that similar high quality GaN layers can be achieved on both annealed O-face and Zn-face ZnO substrates. The prospect of the device applications of GaN epitaxy on ZnO, including AlGaN/GaN MODFET structure on ZnO and GAN/ZnO based p-n junction were discussed.

Identiferoai:union.ndltd.org:vcu.edu/oai:scholarscompass.vcu.edu:etd-2006
Date01 January 2004
CreatorsGu, Xing
PublisherVCU Scholars Compass
Source SetsVirginia Commonwealth University
Detected LanguageEnglish
Typetext
Formatapplication/pdf
SourceTheses and Dissertations
Rights© The Author

Page generated in 0.0019 seconds