Using a numerical method to simulate the Metal-Organic
Chemical Vapor Deposition (MOCVD). A study of the GaN films were growth on sapphire substrates, and a new design method which The position of carrier gas inlets and outlets, the gas in inlets by a showerhead reactor, the modified susceptor. The purpose of this research is to maintain deposited GaN film thickness variation range by controlling those parameters which may affect the deposition.
Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0726104-143956 |
Date | 26 July 2004 |
Creators | Kuo, Feng-Ming |
Contributors | Tai-Fa Young, Charlie Chang, Jen-Jyh Hwang |
Publisher | NSYSU |
Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
Language | Cholon |
Detected Language | English |
Type | text |
Format | application/pdf |
Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726104-143956 |
Rights | unrestricted, Copyright information available at source archive |
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