We invistegated the characteristic of GaN grown on LiAlO2 substrate by molecular epitaxy beam. We observed the c-plane GaN crystalls assembled at the step-edge of M-plane GaN terraces, with 200 nm ~ 600 nm diameter and 300 nm height. Furthermore, we also observed that there are two kinds of formations for c-palne GaN: one is grown from the hexagonal plane of LAO, the other is transformed from the defeat of M-plane GaN. In addition, we changed the growth ratio and concluded some relation between the quality of thin film and roughness of surface. We expect to improve the quality of M-plane GaN and the size and density of c-plane GaN single-crystals by changing growth conditions.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0719107-173536 |
| Date | 19 July 2007 |
| Creators | Pang, Wen-Yuan |
| Contributors | Jih-Chen Chiang, Ming-Kwei Lee, Ikai Lo |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719107-173536 |
| Rights | withheld, Copyright information available at source archive |
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