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Characterization and Growth of GaMnN Nanorods Grown by Plasma-Assisted Molecular Beam Epitaxy

In this work, Mn atoms are doped into GaN nanorods by two doping types, homogeneous and delta doping, and GaN nanorods are grown on Si (111) substrate using plasma-assisted MBE. The GaMnN nanorods are characterized by scanning electron microscopy (SEM), energy dispersive spectrometer (EDS), high-resolution x-ray diffraction (HR-XRD), Raman scattering, Transmission electron microscopy (TEM), superconducting quantum interference device (SQUID), and x-ray photoelectron spectroscopy (XPS).
The Mn delta-doping GaN nanorods with Ga/Mn growth time ratio 20 are approximately 1500 nm in height, grown along the c-axis. The Mn concentration in nanorods is determined to be 0.83% by EDS, without secondary phase formation. The Mn atoms substitute Ga sites in the GaN wurtzite hexagonal structure and, according to the results of Raman, there is no observable Mn-N cluster formation existed. The delta-doping structure, without secondary phase inclusions, can be observed under TEM imaging of the nanorods. The nanorods appear to show ferromagnetic behavior at room temperature, as judged by the M-H with hysteresis curve, however the small the loops are. The delta-doping is adopted in this thesis work to fabricate GaMnN DMS nanorods without secondary phase formation.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0731112-182742
Date31 July 2012
CreatorsChen, Ting-Hong
ContributorsDer-Jun Jang, Shih-Wei Feng, Wang-Chuang Kuo, Li-Wei Tu, Yung-Sung Chen
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageEnglish
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731112-182742
Rightsuser_define, Copyright information available at source archive

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