Crystalline indium oxide nanowires were synthesized following optimization of growth parameters. Oxygen vacancies were found to impact the optical and electronic properties of the as-grown nanowires. Photoluminescence measurements showed a strong U.V emission peak at 3.18 eV and defect peaks in the visible region at 2.85 eV, 2.66 eV and 2.5 eV. The defect peaks are attributed to neutral and charged states of oxygen vacancies. Post-growth annealing in oxygen environment and passivation with sulphur are shown to be effective in reducing the intensity of the defect induced emission. The as-grown nanowires connected in an FET type of configuration shows n-type conductivity. A single indium oxide nanowire with ohmic contacts was found to be sensitive to gas molecules adsorbed on its surface.
| Identifer | oai:union.ndltd.org:unt.edu/info:ark/67531/metadc103318 |
| Date | 12 1900 |
| Creators | Gali, Pradeep |
| Contributors | Philipose, Usha, Zhang, Hualiang, Neogi, Arup, Guturu, Parthasarathy |
| Publisher | University of North Texas |
| Source Sets | University of North Texas |
| Language | English |
| Detected Language | English |
| Type | Thesis or Dissertation |
| Format | Text |
| Rights | Public, Gali, Pradeep, Copyright, Copyright is held by the author, unless otherwise noted. All rights reserved. |
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