A gate driver IC with programmable driving strength to reduce electromagnetic interference (EMI) in SMPS is presented in this thesis. The design builds on previous segmented gate driver designs that have been used to improve light load efficiency. The presented solution is to dynamically adjust the output resistance Rout at the arrival of each gate pulse to minimize EMI while maintaining low switching loss. Dynamically adjusting Rout is not possible with conventional gate driver designs. Thus, a segmented gate driver is designed and fabricated in the AMS 0.35μm 40V HVCMOS process. Unlike traditional snubber circuits, the proposed method does not require extra discrete components that dissipate energy. Experimental results indicate up to a 7dBμV improvement in peak Conducted EMI (CEMI) between 20 MHz and 30 MHz and a 150μV/m improvement in peak Radiated EMI (REMI) between 88 MHz and 216 MHz.
| Identifer | oai:union.ndltd.org:TORONTO/oai:tspace.library.utoronto.ca:1807/31441 |
| Date | 20 December 2011 |
| Creators | Shorten, Andrew William |
| Contributors | Ng, Wai Tung |
| Source Sets | University of Toronto |
| Language | en_ca |
| Detected Language | English |
| Type | Thesis |
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