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Evaluation of gallium arsenide Schottky Gate Bipolar Transistor for high-voltage power switching applications

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Identiferoai:union.ndltd.org:bl.uk/oai:ethos.bl.uk:263129
Date January 1998
CreatorsHossin, Mohamad Abdalla
PublisherUniversity of Newcastle Upon Tyne
Source SetsEthos UK
Detected LanguageEnglish
TypeElectronic Thesis or Dissertation

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