Return to search

Metal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor deposition

Thesis (Ph. D.)--University of Texas at Austin, 2006. / Vita. Includes bibliographical references.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/166229357
Date January 1900
CreatorsKelly, David Quest.
Publisher[Austin, Tex. : University of Texas Libraries,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

Page generated in 0.0018 seconds