by Lui Ka Man Raymond. / Thesis (Ph.D.)--Chinese University of Hong Kong, 1996. / Includes bibliographical references (leaves 190-202). / by Lui Ka Man Raymond. / Acknowledgements / Abstract / Table of contents --- p.i / Chapter Chapter 1 --- Introduction / Chapter 1.1) --- General overview --- p.1 / Chapter 1.2) --- The present study --- p.4 / Chapter Chapter 2 --- Theory / Chapter 2.1) --- Introduction --- p.8 / Chapter 2.2) --- Energy transfer from an incoherent radiation source --- p.9 / Chapter 2.3) --- Interaction between photons and solid --- p.11 / Chapter 2.4) --- Probability of a direct transition of amorphous germanium to liquid germanium --- p.12 / Chapter 2.5) --- Crystallization in the supercooled melts and interface stability of the crystallizing front --- p.20 / Chapter A) --- Homogeneous nucleation --- p.21 / Chapter B) --- Heterogeneous nucleation --- p.24 / Chapter C) --- Interfacial stability of the crystallizing front --- p.25 / Chapter Chapter 3 --- Sample preparation / Chapter 3.1) --- Introduction --- p.36 / Chapter 3.2) --- The sample preparation system --- p.36 / Chapter A) --- General description --- p.36 / Chapter B) --- The electron beam source and other components --- p.37 / Chapter C) --- The thermal pulse furnace (TPF) --- p.38 / Chapter 3.3) --- The substrates --- p.41 / Chapter 3.4) --- Sample preparations --- p.42 / Chapter Chapter 4 --- Dendritic crystallization of amorphous germanium on amorphous substrate / Chapter 4.1) --- Introduction --- p.47 / Chapter 4.2) --- Sample preparation and experimental methods --- p.48 / Chapter A) --- Sample preparation --- p.48 / Chapter B) --- Characterization methods --- p.50 / Chapter 4.3) --- Experimental results --- p.54 / Chapter 4.4) --- Discussions --- p.58 / Chapter A) --- Existence of a supercooled semiconductive liquid phase --- p.58 / Chapter B) --- Suppression of nucleation in the supercooled liquid --- p.61 / Chapter C) --- The effect of substrate width on the confinement of <110> crystal axes --- p.63 / Chapter D) --- The effect of annealing ambient --- p.63 / Chapter 4.5) --- Conclusions --- p.65 / Chapter Chapter 5 --- Transport properties of dendritic Ge films / Chapter 5.1) --- Introduction --- p.93 / Chapter 5.2) --- Theory --- p.93 / Chapter A) --- Expression of electrical drift mobility by the relaxation time approximation --- p.94 / Chapter B) --- Electrical drift mobility resulting from ionized impurity scattering --- p.98 / Chapter 5.3) --- Experimental methods --- p.102 / Chapter A) --- Sample annealing --- p.102 / Chapter B) --- Temperature-dependent electrical conductivity measurements (303 K - 523 K) --- p.102 / Chapter C) --- Temperature-dependent Hall mobility measurements (20 K - 300 K) --- p.103 / Chapter 5.4) --- Experimental results --- p.105 / Chapter A) --- Conductivity in the high temperature range K - 303 K --- p.105 / Chapter B) --- Sheet conductance in the temperature range 300K - 20 K --- p.105 / Chapter C) --- Hall mobility in the temperature range 300K to 20 K --- p.107 / Chapter 5.5) --- Discussions --- p.108 / Chapter A) --- Temperature dependence of electical conductivity --- p.108 / Chapter B) --- Temperature-dependent Hall mobility measurements --- p.111 / Chapter 5.6) --- Conclusions --- p.115 / Chapter Chapter 6 --- Crystallization of amorphous germanium film on (001) GaAs wafers / Chapter 6.1) --- Introduction --- p.131 / Chapter A) --- General review --- p.131 / Chapter B) --- The present study --- p.132 / Chapter 6.2) --- Sample preparation and experimental methods --- p.134 / Chapter A) --- Sample preparation --- p.134 / Chapter B) --- Characterization methods --- p.135 / Chapter 6.3) --- Experimental results --- p.143 / Chapter A) --- Epitaxial regrowth of a-Ge films on semi-insulating (001) GaAs --- p.144 / Chapter B) --- Influence of the substrate and the initial thickness of a-Ge film on the process of crystallization --- p.146 / Chapter C) --- Results from electron spectroscopy and EDX dot-map --- p.148 / Chapter D) --- The electrical property of the Ge/GaAs heterojunction --- p.150 / Chapter 6.4) --- Discussions --- p.150 / Chapter A) --- Substrate dependence --- p.150 / Chapter B) --- Sample thickness dependence --- p.153 / Chapter C) --- Regrowth mechanism --- p.154 / Chapter 6.5) --- Conclusions --- p.156 / Chapter Chapter 7 --- Conclusions and suggestions for further studies / Chapter 7.1) --- Conclusions --- p.183 / Chapter A) --- On amorphous substrate [Corning 7059 glass] --- p.183 / Chapter B) --- On crystalline substrate [GaAs (001) wafer] --- p.185 / Chapter 7.2) --- Suggestions for further studies --- p.186 / Chapter A) --- Synthesis of Ge/GaAs heterojunction with abrupt interface --- p.186 / Chapter B) --- Applying the thermal pulse annealing method to other systems --- p.186 / Chapter C) --- Studying the size and shape-dependence of Raman spectrum by using sample with highly uniform grain size and well-defined geometry --- p.187 / Appendix A --- p.188 / References --- p.190
| Identifer | oai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_321574 |
| Date | January 1996 |
| Contributors | Lui, Ka Man Raymond., Chinese University of Hong Kong Graduate School. Division of Physics. |
| Publisher | Chinese University of Hong Kong |
| Source Sets | The Chinese University of Hong Kong |
| Language | English |
| Detected Language | English |
| Type | Text, bibliography |
| Format | print, v, 202 leaves : ill. ; 30 cm. |
| Rights | Use of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/) |
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