The doctoral thesis deals with the structure and properties of the polycrystalline silicon layers deposited on the silicon wafers backside. The wafers are further used for production of semiconductor devices. This work is focused on detailed description of the layers structure and study of the gettering properties and residual stress of the layers. The main goal of this work is to develop two novel technologies. The first one leads to improvement of the temperature stability of the gettering properties of the layers, and the second one solves the deposition of the layers with pre-determined residual stress. This doctoral thesis was created with the support of the company ON Semiconductor Czech Republic, Rožnov pod Radhoštěm.
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:233931 |
| Date | January 2010 |
| Creators | Lysáček, David |
| Contributors | Schmidt, Eduard, Fejfar, Antonín, Spousta, Jiří |
| Publisher | Vysoké učení technické v Brně. Fakulta strojního inženýrství |
| Source Sets | Czech ETDs |
| Language | Czech |
| Detected Language | English |
| Type | info:eu-repo/semantics/doctoralThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
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