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Effect Of Interfacial Top Electrode Layer On The Performance Of Niobium Oxide Based Resistive Random Access Memory

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1. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1552657250617694

Identifer	oai:union.ndltd.org:OhioLink/oai:etd.ohiolink.edu:ucin1552657250617694
Date	11 July 2019
Creators	Manjunath, Vishal Jain
Publisher	University of Cincinnati / OhioLINK
Source Sets	Ohiolink ETDs
Language	English
Detected Language	English
Type	text
Source	http://rave.ohiolink.edu/etdc/view?acc_num=ucin1552657250617694
Rights	unrestricted, This thesis or dissertation is protected by copyright: all rights reserved. It may not be copied or redistributed beyond the terms of applicable copyright laws.