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High-permittivity dielectrics and high mobility semiconductors for future scaled technology Hf-based High-K gate dielectrics and interface engineering for HfO₂/Ge CMOS device /

Thesis (Ph. D.)--University of Texas at Austin, 2006. / Vita. Includes bibliographical references.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/163973699
Date January 1900
CreatorsLu, Nan,
Publisher[Austin, Tex. : University of Texas Libraries,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish

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