Process development, characterization, transient relaxation, and reliability study of HfO₂ and HfSi(x)O(y) gate oxide for 45nm technology and beyond

Description

Thesis (Ph. D.)--University of Texas at Austin, 2005. / Supervisor: Jack C. Lee. Vita. Includes bibliographical references.

Links & Downloads

1. http://repositories.lib.utexas.edu/bitstream/handle/2152/1495/akbarm58099.pdf

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Additional Fields

Identifer	oai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/61185660
Date	January 2005
Creators	Akbar, Mohammad Shahariar. Lee, Jack Chung-Yeung,
Source Sets	OCLC
Language	English
Detected Language	English