Return to search

Process development, characterization, transient relaxation, and reliability study of HfO₂ and HfSi(x)O(y) gate oxide for 45nm technology and beyond

Not available / text

Identiferoai:union.ndltd.org:UTEXAS/oai:repositories.lib.utexas.edu:2152/1495
Date28 August 2008
CreatorsAkbar, Mohammad Shahariar
Source SetsUniversity of Texas
LanguageEnglish
Detected LanguageEnglish
TypeThesis
Formatelectronic
RightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.

Page generated in 0.0017 seconds