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Study of HFO₂ as a future gate dielectric and implementation of polysilicon electrodes for HFO₂ films /

Thesis (Ph. D.)--University of Texas at Austin, 2000. / Vita. Includes bibliographical references (leaves 147-155). Available also in a digital version from Dissertation Abstracts.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/50786429
Date January 2000
CreatorsKang, Laeugu,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceFull text (PDF) from UMI/Dissertation Abstracts International

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