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Determining Carrier Mobilities in GaAs and Natural Pyrite Using Geometrical Magnetoresistance Measurement

abstract: Measurements of the geometrical magnetoresistance of a conventional semiconductor, gallium arsenide (GaAs), and a more recently developed semiconductor, iron pyrite (FeS2) were measured in the Corbino disc geometry as a function of magnetic field to determine the carrier mobility (μm). These results were compared with measurements of the Hall mobility (μH) made in the Van der Pauw configuration. The scattering coefficient (ξ), defined as the ratio between magnetoresistance and Hall mobility (μm/μH), was determined experimentally for GaAs and natural pyrite from 300 K to 4.2 K. The effect of contact resistance and heating on the measurement accuracy is discussed. / Dissertation/Thesis / Masters Thesis Materials Science and Engineering 2016

Identiferoai:union.ndltd.org:asu.edu/item:38786
Date January 2016
ContributorsRavi, Aditya (Author), Newman, Nathan (Advisor), Singh, Rakesh (Committee member), Ferry, David K (Committee member), Arizona State University (Publisher)
Source SetsArizona State University
LanguageEnglish
Detected LanguageEnglish
TypeMasters Thesis
Format76 pages
Rightshttp://rightsstatements.org/vocab/InC/1.0/, All Rights Reserved

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