InN thin films were grown on £^-LiAlO2 (100) by plasma-assisted molecular-beam epitaxy (PAMBE). Structural properties were investigated by reflective high-energy
electron diffraction (RHEED), x-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM). XRD measurements showed that the crystal orientation of InN films was non-polar m-plane (11 ¡Â00). In addition, from SEM images, a striped morphology was observed along
[112 ¡Â0]. Optical properties were characterized by photoluminescence (PL) spectroscopy, cathodoluminescence (CL) spectroscopy and micro-Raman scattering. Both CL/PL
results revealed that InN films have a luminescence-emission peak-energy of about 0.65 eV. Carrier concentration had been determined by Hall measurements.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0901108-041041 |
| Date | 01 September 2008 |
| Creators | Lee, Zong-Lin |
| Contributors | Yen, Tsu-Chiang, Jang, Der-Jun, Tsai, Min-Hsiung, Chen, Yung-Sung, Tu, Li-Wei |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0901108-041041 |
| Rights | not_available, Copyright information available at source archive |
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