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Alloying phenomenon of amorphous silicon and germanium double layers on silicon wafer generated by in-situ thermal pulse =: 原位熱脈衝對硅片上非晶硅鍺雙層薄膜所產生的合金現象. / 原位熱脈衝對硅片上非晶硅鍺雙層薄膜所產生的合金現象 / Alloying phenomenon of amorphous silicon and germanium double layers on silicon wafer generated by in-situ thermal pulse =: Yuan wei re mai chong dui gui pian shang fei jing gui zhe shuang ceng bo mo suo chan sheng de he jin xian xiang. / Yuan wei re mai chong dui gui pian shang fei jing gui zhe shuang ceng bo mo suo chan sheng de he jin xian xiang

by Yeung Ching Chung. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1998. / Includes bibliographical references (leaves 69-71). / Text in English; abstract also in Chinese. / by Yeung Ching Chung. / Table of contents --- p.i / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- General overview --- p.1 / Chapter 1.2 --- The present study --- p.3 / Chapter Chapter 2 --- Sample preparation and characterization / Chapter 2.1 --- Sample preparation / Chapter A. --- General description --- p.5 / Chapter B. --- The thermal pulse furnace --- p.7 / Chapter C. --- The substrates --- p.9 / Chapter D. --- Sample preparation --- p.10 / Chapter 2.2 --- Sample characterization / Chapter A. --- Micro Raman system --- p.11 / Chapter B. --- Rutherford backscattering spectrometry (RBS) --- p.12 / Chapter C. --- X-ray powder diffraction --- p.13 / Chapter D. --- AFM. SEM and Surface Profiler --- p.13 / Chapter Chapter 3 --- Results and discussion / Chapter 3.1 --- The surface morphology / Chapter A. --- General description --- p.15 / Chapter B. --- The as-deposited amorphous film --- p.15 / Chapter C. --- The crystalline Ge film --- p.16 / Chapter D. --- The alloy film --- p.17 / Chapter E. --- The role of a-Si layer --- p.22 / Chapter 3.2 --- The depth profile (RBS) / Chapter A. --- General description --- p.24 / Chapter B. --- Peak temperature dependence --- p.27 / Chapter C. --- Heating rate dependence --- p.30 / Chapter 3.3 --- The near surface composition measured by Raman scattering / Chapter A. --- General description --- p.33 / Chapter B. --- Peak temperature dependence --- p.43 / Chapter C. --- Heating rate dependence --- p.45 / Chapter 3.4 --- Preferred growth direction / Chapter A. --- General description --- p.47 / Chapter B. --- Peak temperature dependence --- p.48 / Chapter C. --- Heating rate dependence --- p.51 / Chapter 3.5 --- Discussion / Chapter A. --- The particle size --- p.55 / Chapter B. --- The participation of Si substrate --- p.58 / Chapter C. --- The alloy formation --- p.58 / Chapter D. --- The abnormally fast interdiffusion --- p.63 / Chapter Chapter 4 --- Conclusion --- p.65 / Appendix --- p.67 / References --- p.69

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_322296
Date January 1998
ContributorsYeung, Ching Chung., Chinese University of Hong Kong Graduate School. Division of Physics.
Source SetsThe Chinese University of Hong Kong
LanguageEnglish, Chinese
Detected LanguageEnglish
TypeText, bibliography
Formatprint, iii, 71 leaves : ill. ; 30 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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