The structural and stress changes in molybdenum/amorphous silicon (Mo/a-Si)
EUV reflecting multilayers during annealing at 316��C were studied. The amorphous
interlayers, with an Mo:Si stoichiometry of 1:2, grew during annealing. The residual
stresses in each component of the multilayer also changed significantly. Through high
resolution electron microscopy, selected area electron diffraction, and x-ray diffraction of
the crystalline Mo, the biaxial tensile stresses were shown to increase from approximately
two to about ten GPa in the lateral direction, parallel to the interface plane. The
compressive strains developed in the vertical direction, perpendicular the interface plane,
are consistent with a Poisson contraction calculated from bulk elastic properties. Laser
deflectometry measurements of thicker (non-EUV, 0.1��m) amorphous silicon showed
compressive stress relaxation in the amorphous silicon with annealing, which may also take
place in the thin (EUV) silicon. The residual stress in a 40 bilayer EUV film changes from
about -0.5 GPa to about +1.5 GPa. / Graduation date: 1996
| Identifer | oai:union.ndltd.org:ORGSU/oai:ir.library.oregonstate.edu:1957/34701 |
| Date | 31 October 1995 |
| Creators | Weber, Frank John |
| Contributors | Kassner, Michael E. |
| Source Sets | Oregon State University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis/Dissertation |
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