<p> This report presents a study of the sputtering of
vacuum deposited thin films of cadmium sulphide on a (111)
face of single crystal silicon by Rutherford backscattering
(RBS) technique. Cadmium was found to be preferentially
sputtered when bombarded to high fluences of 80 kV Bi+
while no significant preferential sputtering was observed
in the case of 40 kV Ar+ bombardment. </p> <p> The structural study by reflection high energy electron
diffraction (RHEED) revealed that the films grew epitaxially
in the wurtzite structure. The epitaxial relations
are (00.1) Cds || (111) Si with [10.0] II [110] Si. </p> <p> Scanning electron microscope (SID4) microphotographs
showed smooth surface features with a large grain size (surface
grain size was ~ 83 nm) for a film of about 60 nm thickness. </p> <p> The basic structure did not change with highest fluences
of Bi+ (Sxlo16 ions/cm2 ) and Ar+ (6.7xlo16 ions/cm2).
He+ beam channeling was done for unbombarded and bombarded CdS
films. It was found that the critical angle of channeling for
cadmium increased for bombarded samples while for sulfur the
statistics were too poor for any conclusion. </p> <p> Saturation fluences for bismuth and argon retention
were observed and are compared with calculated values. </p> / Thesis / Master of Engineering (MEngr)
| Identifer | oai:union.ndltd.org:mcmaster.ca/oai:macsphere.mcmaster.ca:11375/19926 |
| Date | 04 1900 |
| Creators | Parikh, Nalin |
| Contributors | Thompson, D. A., Clarke, R. A., Engineering Physics |
| Source Sets | McMaster University |
| Language | English |
| Detected Language | English |
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