The electronic structure at interface between two insulators LaAlO3 and SrTiO3 has been investigated by using scanning tunneling microscopy and spectroscopy. The atomic-scale interfacial band structure is also demonstrated in the work with the consideration of the tip-induced band bending effect.
Experimental results indicate that the magnitude of the built-in field across LaAlO3 is 0.075¡Ó0.005 V/Å. The band bending on SrTiO3 side at the heterointerface is observed. The band downshift of SrTiO3 side at the interface is 0.1 eV with ~1 nm decay length.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0722111-102454 |
| Date | 22 July 2011 |
| Creators | Wang, Wen-Ching |
| Contributors | Hsiung Chou, Chung-Lin Wu, Ya-Ping Chiu, Yi-Chun Chen |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0722111-102454 |
| Rights | withheld, Copyright information available at source archive |
Page generated in 0.0018 seconds