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Ultra-wideband tunable circuit design using silicon-germanium heterojunction bipolar transistors

This thesis explores the critical advantages of using silicon-germanium (SiGe) HBTs for RF front-end design. The first chapter looks at the SiGe BiCMOS technology platform and its important performance metrics. The second chapter discusses ultra-wide tuneability and the critical role that this functionality can have on real world applications. The third chapter presents simulated and measured results of two wideband ring oscillators (8-18 GHz) designed and fabricated in the Jazz 120 BiCMOS platform. A 7-22 GHz wideband VGA in the 8HP platform is also presented further exemplifying the wideband
capabilities of SiGe HBTs.

Identiferoai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/34807
Date20 May 2010
CreatorsShankar, Subramaniam
PublisherGeorgia Institute of Technology
Source SetsGeorgia Tech Electronic Thesis and Dissertation Archive
Detected LanguageEnglish
TypeThesis

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