Efficient power conversion is essential to face the continuously increasing energy consumption of our society. GaN based vertical power field effect transistors provide excellent performance figures for power-conversion switches, due to their capability of handling high voltages and current densities with very low area consumption. This work focuses on a vertical trench gate metal oxide semiconductor field effect transistor (MOSFET) with conceptional advantages in a device fabrication preceded GaN epitaxy and enhancement mode characteristics. The functional layer stack comprises from the bottom an n+/n- drift/p body/n+ source GaN layer sequence. Special attention is paid to the Mg doping of the p-GaN body layer, which is a complex topic by itself. Hydrogen passivation of magnesium plays an essential role, since only the active (hydrogen-free) Mg concentration determines the threshold voltage of the MOSFET and the blocking capability of the body diode.
Fabrication specific challenges of the concept are related to the complex integration, formation of ohmic contacts to the functional layers, the specific implementation and processing scheme of the gate trench module and the lateral edge termination.
The maximum electric field, which was achieved in the pn- junction of the body diode of the MOSFET is estimated to be around 2.1 MV/cm. From double-sweep transfer measurements with relatively small hysteresis, steep subthreshold slope and a threshold voltage of 3 - 4 V a reasonably good Al2O3/GaN interface quality is indicated. In the conductive state a channel mobility of around 80 - 100 cm2/Vs is estimated. This obtained value is comparable to device with additional overgrowth of the channel.
Further enhancement of the OFF-state and ON-state characteristics is expected for optimization of the device termination and the high-k/GaN interface of the vertical trench gate, respectively. From the obtained results and dependencies key figures of an area efficient and competitive device design with thick drift layer is extrapolated. Finally, an outlook is given and advancement possibilities as well as technological limits are discussed.:1 Motivation and boundary conditions
1.1 A comparison of competitive semiconductor materials
1.2 Vertical GaN device concepts
1.3 Target application for power switches
2 The vertical GaN MOSFET concept
2.1 Incomplete ionization of dopants
2.2 The pseudo-vertical approach
2.3 Considerations for the device OFF-state
2.3.1 The pn-junction in reverse operation
2.3.2 The gate trench MIS-structure in OFF-state
2.3.3 Dimensional constraints and field plates
2.4 Static ON-state and switching considerations
2.4.1 The pn-junction in forward operation
2.4.2 Resistance contributions
2.4.3 Device model and channel mobility
2.4.4 Threshold voltage and subthreshold slope
2.4.5 Interface and dielectric trap states in wide band semiconductors
2.4.6 The body bias effect
3 Fabrication and characterisation
3.1 Growth methods for GaN substrates and layers
3.2 Substrates and the desired starting material
3.2.1 Physical and micro-structural characterisation
3.2.2 Dislocations and impurities
3.3 Pseudo- and true-vertical MOSFET fabrication
3.3.1 Processing routes
3.3.2 Inductively-coupled plasma etching
3.3.3 Process flow modification
3.4 Electrical characterisation, structures and process control
3.4.1 Current voltage characterisation
3.4.2 C(V) measurements and charge carrier profiling
3.4.3 Cooperative characterisation structures
4 Properties of the functional layers
4.1 Morphology of the MOVPE grown layers
4.2 Hydrogen out-diffusion treatment
4.3 Morphology of the n+-source layer grown by MBE
4.4 N-type doping of the functional layers
4.5 P-type GaN by magnesium doping
4.6 Structural properties after the etching and gate module formation
4.7 Electrical layer characterization
4.7.1 Gate dielectric and interface evaluation
5 Pseudo- and true vertical device operation
5.1 Influences of the metal-line sheet resistance
5.2 Formation and characterisation of ohmic contacts
5.2.1 Ohmic contacts to n-type GaN
5.2.2 Ohmic contacts to p-GaN
5.3 The pn- body diode
5.4 MOSFET operation
5.4.1 ON-state and turn-ON operation
5.4.2 The body bias effect on the threshold voltage
5.4.3 Device OFF-state
6 Summary and conclusion
6.1 Device performance
6.2 Current limits of the vertical device technology
6.3 Possibilities for advancements
Bibliography
A Appendix
A.1 Deduction: Forward diffusion current of the pn-diode
A.2 Deduction: Operation regions in the EKV model
Figures
Tables
Abbreviations
Symbols
Postamble and Acknowledgement
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:74885 |
| Date | 14 May 2021 |
| Creators | Hentschel, Rico |
| Contributors | Mikolajick, Thomas, Burghartz, Joachim, Technische Universität Dresden |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:doctoralThesis, info:eu-repo/semantics/doctoralThesis, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
Page generated in 0.0024 seconds