Colloidal quantum dots (CQDs) are an inexpensive and solution processable photovoltaic(PV) material reaching modest efficiencies of 6%. However, doping quantum dots still remains a challenge. This thesis explores the level of doping in lead sulfide (PbS)CQDs by surface ligands and bulk doping within the quantum dot lattice using metals.
In light of the knowledge that oxygen creates traps on the surface of PbS CQDs, we
have turned to the use of oxygen-free fabrication. We find that under a nitrogen environment, PbS CQD films are n-type and tunable in doping by use of halide ions. We show for the first time control over the doping density of n-type CQD films over a wide range. We also show the ability to fabricate p-type PbS films with high doping
density that are compatible with n-type films. This compatibility enabled us
to make the world’s first CQD homojunction PV device.
| Identifer | oai:union.ndltd.org:LACETR/oai:collectionscanada.gc.ca:OTU.1807/32242 |
| Date | 21 March 2012 |
| Creators | Furukawa, Melissa |
| Contributors | Sargent, Edward H. |
| Source Sets | Library and Archives Canada ETDs Repository / Centre d'archives des thèses électroniques de Bibliothèque et Archives Canada |
| Language | en_ca |
| Detected Language | English |
| Type | Thesis |
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