Return to search

Electrical Properties and Band Diagram of InSb-InAs Nanowire Type-III Heterojunctions

The electrical properties of nanowire-based n-InSb-n-InAs heterojunctions grown by
chemical beam epitaxy were investigated both theoretically and experimentally. This
heterostructure presented a type-III band alignment with the band bendings at 0.12 eV
for InAs side and 0.16 − 0.21 eV in InSb. Analysis of the temperature dependent current
voltage characteristics showed that the current through the heterojunction is caused
mostly by generation-recombination processes in the InSb and at the heterointerface. Due
to the partially overlapping valence band of InSb and the conduction band of InAs, the
second process was fast and activationless. Theoretical analysis showed that, depending
on the heterojunction parameters, the flux of non-equilibrium minority carriers may have
a different direction, explaining the experimentally observed non-monotonic coordinate
dependence of the electron beam induced current at the vicinity of heterointerface.

Identiferoai:union.ndltd.org:TORONTO/oai:tspace.library.utoronto.ca:1807/42727
Date21 November 2013
CreatorsChen, Chao-Yang
ContributorsRuda, Harry E.
Source SetsUniversity of Toronto
Languageen_ca
Detected LanguageEnglish
TypeThesis

Page generated in 0.0019 seconds