Surface roughness of InP after N+2 bombardment : Ion areic dose dependence

Description

Please read the abstract in the section front of this document. / Dissertation (MSc (Physics))--University of Pretoria, 2006. / Physics / unrestricted

Links & Downloads

1. http://hdl.handle.net/2263/24608
2. Osman, SOS 2004, Surface roughness of InP after N+2 bombardment: Ion areic dose dependence, MSc dissertation, University of Pretoria, Pretoria, viewed yymmdd < http://hdl.handle.net/2263/24608 >
3. H250/ag
4. http://upetd.up.ac.za/thesis/available/etd-05132005-105139/

Tags

Electronics materials

Indium compounds

Semiconducrtors

Surface roughness

Indium phosphide

UCTD

Additional Fields

Identifer	oai:union.ndltd.org:netd.ac.za/oai:union.ndltd.org:up/oai:repository.up.ac.za:2263/24608
Date	13 May 2005
Creators	Osman, Sarah Omer Siddig
Contributors	Malherbe, Johan B., [e-mail], Van den Berg, Noelani
Publisher	University of Pretoria
Source Sets	South African National ETD Portal
Detected Language	English
Type	Dissertation
Rights	© 2004, University of Pretoria. All rights reserved. The copyright in this work vests in the University of Pretoria. No part of this work may be reproduced or transmitted in any form or by any means, without the prior written permission of the University of Pretoria.