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Photoreflectance spectroscopy of InN at different temperature

InN is a semiconductor material of vary high electron mobility, so InN have potential for high speed electronic device. But the bandgap is not sure. We use photoreflectance spectroscopy to investigate bandgap of InN at different temperature. We use third derivative reflectance formula of low field to fit experimental data and appraisal the type of electron transition.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0704105-134536
Date04 July 2005
CreatorsChen, Chao-nien
ContributorsYan-Ten Lu, Dong-Po Wang, Li-Wei Tu
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704105-134536
Rightswithheld, Copyright information available at source archive

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