InN films were grown on Si(111) wafer with AlN buffer layer by plasma-assisted molecular beam epitaxy (PAMBE). The sample went through a conventional cleaning process which involved sequential rinsing in acetone (5 mins), isopropyl alcohol (5 mins), de-ionized water (5 mins), and blown dry with nitrogen before SiO2 deposited. We used E-beam to deposit SiO2 thin film on InN. Ohmic contact (Ti) was prepared by e-beam evaporation. The system used to measure the high-frequency and low-frequency consists of Keithley 590 analyzer and Quasistatic CV meter.
At last we added the capacitance-voltage study of the Si MOS structure and the research of growing high quality AlN for high quality InN.
Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0718107-122606 |
Date | 18 July 2007 |
Creators | Tsai, Chia-hsiu |
Contributors | T. C. Yen, Q. Y. Chen, L. W. Tu, M. H. Tsai |
Publisher | NSYSU |
Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
Language | Cholon |
Detected Language | English |
Type | text |
Format | application/pdf |
Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718107-122606 |
Rights | not_available, Copyright information available at source archive |
Page generated in 0.002 seconds