This thesis discusses the crystal quality and transition of electrons and holes pairs by temperature- and power- dependent Photoluminescence (PL). With the PL spectra, we apply four kinds of Internal Quantum Efficiency (IQE) formulas for c- and m- plane III-nitride and discuss the differences of the four formulas. An analysis of IQE is performed and it is found for m-plane III-nitride being larger than c-plane III-nitride. This result confirms that characteristic m-plane structure can increase its
radiative recombination.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0826109-182301 |
| Date | 26 August 2009 |
| Creators | Huang, Pei-lun |
| Contributors | Der-Jun Jang, Tsu-Chiang Yen, Quark Yung-Sung Chen, Min-Hsiung Tsai, L. W. Tu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826109-182301 |
| Rights | not_available, Copyright information available at source archive |
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