Return to search

Investigation of the PA-MBE grown InN thin film using Photoluminescence and HRXRD

We discuss the PL spectra of the InN band gap. The InN thin film epitaxy grows on both Si (111) and sapphire (0001) by the PA-MBE (molecular beam epi). We change different grown conditions to improve the sample quality.
In experiment part, the first step is to make sure the sample is really InN, using X-ray diffraction. And then we compare the quality of all sample, by the FWHM of X-ray diffraction rocking curve and the SEM pictures.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0729104-220803
Date29 July 2004
CreatorsFan, Ni-wan
ContributorsLi-wei Tu, Ikai Lo, Jih-Chen Chiang, Der-Jun Jang
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729104-220803
Rightscampus_withheld, Copyright information available at source archive

Page generated in 0.0021 seconds