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X-Ray Diffraction Study of InN

In this research, X-ray Diffraction is used to detect the existence of the In metal signal of the Indium Nitride (InN) through the analysis of two samples grown from the plasma-assisted molecular beam epitaxy (PAMBE). Sample A was grown on the Al2O3(0001) substrate with Gallium Nitride as a buffer layer, while Sample B was grown directly on the Si(111) substrate. Through X-ray Diffraction, we discovered the In(101) signal on Sample A and the InN(10-11) signal on Sample B. However, the two peaks of both signals were so close that it was difficult to differentiate them. Besides, the scanning electron microscope failed to show the existence of the In metal on the surface of both InN samples. Therefore, the high temperature XRD was employed to identify the true signal based on the different melting points between InN and In. Further, an acid etching method was also applied to recognize the existence of the In metal on the surface of the sample.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0822107-215623
Date22 August 2007
CreatorsHsu, Ming-zheng
ContributorsLi-wei Tu, Quark Chen, Dong-po Wang
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0822107-215623
Rightsnot_available, Copyright information available at source archive

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