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InGaAsN/GaAs Quantum-well Laser Diodes

GaAs-based InGaAsN/GaAs quantum well is found to be very sensitive to growth conditions and ex-situ annealing processes. Annealing could drastically increase the optical quality of GaAs-based InGaAsN/GaAs quantum well. As an end of this paper, some results on InGaAsN/GaAsN/AlGaAs laser diodes are also presented. / Singapore-MIT Alliance (SMA)

Identiferoai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/3906
Date01 1900
CreatorsWang, S.Z., Yoon, Soon Fatt
Source SetsM.I.T. Theses and Dissertation
Languageen_US
Detected LanguageEnglish
TypeArticle
Format293743 bytes, application/pdf
RelationInnovation in Manufacturing Systems and Technology (IMST);

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