Unintentionally doped InN thin films have been epitaxially grown on Al2O3 (001) and Si (111) by plasma-assisted molecular beam epitaxy (PAMBE).In this thesis, all the samples are two luminenscent peaks. In analyzing the PL spectra, we look into the variations in peak position, intensities by changing the temperature and the laser power, and PbS detector was used. The temperature dependent PL peak position versus temperature is fitted with Varshni equation. Excitation laser power dependent PL is found to follow a linear relation. The two luminescent peaks of InN are discussed by optical measurement.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0829108-174646 |
| Date | 29 August 2008 |
| Creators | Wu, Kai-Li |
| Contributors | Der-Jun Jang, Quark, Yung-Sung Chen, Li-Wei Tu, Min-Hsiung Tsai |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0829108-174646 |
| Rights | not_available, Copyright information available at source archive |
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