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Influence of growth conditions on the properties of MOCVD growth epitaxial ZnCdSe on InP =: 有機金屬氣相外延生長法中製備條件對磷化銦上硒化鋅鎘特性的影響. / 有機金屬氣相外延生長法中製備條件對磷化銦上硒化鋅鎘特性的影響 / Influence of growth conditions on the properties of MOCVD growth epitaxial ZnCdSe on InP =: You ji jin shu qi xiang wai yan sheng chang fa zhong zhi bei tiao jian dui lin hua yin shang xi hua xin ke te xing de ying xiang. / You ji jin shu qi xiang wai yan sheng chang fa zhong zhi bei tiao jian dui lin hua yin shang xi hua xin ke te xing de ying xiang

by Won Hon Kit. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1997. / Includes bibliographical references (leaves 66-70). / by Won Hon Kit. / Acknowledgment --- p.i / Abstract --- p.ii / Chapter Chapter1 --- Introduction --- p.1 / Chapter 1.1 --- Uniqueness of ZnxCd/1-x Se --- p.1 / Chapter 1.2 --- The Choice of OMVPE --- p.1 / Chapter 1.3 --- Epilayer Relaxation in Heteroepitaxy --- p.2 / Chapter 1.4 --- The Most Suitable Substrate --- p.4 / Chapter Chapter2 --- Experimental Procedures --- p.6 / Chapter 2.1 --- Degreasing and Etching --- p.6 / Chapter 2.2 --- Preheating --- p.6 / Chapter 2.3 --- OMVPE Growth --- p.6 / Chapter Chapter3 --- Characterization --- p.9 / Chapter 3.1 --- X-ray Diffraction --- p.9 / Chapter 3.2 --- EDX Spectroscopy --- p.13 / Chapter 3.3 --- Optical Reflectance --- p.15 / Chapter Chapter4 --- Data Analysis --- p.20 / Chapter 4.1 --- Control of Composition --- p.20 / Chapter 4.2 --- Structural Quality and Epilayer Relaxation --- p.22 / Chapter 4.3 --- Critical Point Energies --- p.24 / Chapter 4.4 --- Refractive Index and Extinction coefficient --- p.26 / Chapter Chapter5 --- Conclusions --- p.28 / List of Figures --- p.30 / Reference --- p.66

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_322148
Date January 1997
ContributorsWon, Hon Kit., Chinese University of Hong Kong Graduate School. Division of Physics.
Source SetsThe Chinese University of Hong Kong
LanguageEnglish
Detected LanguageEnglish
TypeText, bibliography
Formatprint, iv, 70 leaves : ill. ; 30 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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