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Growth of AlInN and zinc blende GaN by molecular beam epitaxy

published_or_final_version / abstract / Physics / Master / Master of Philosophy

  1. 10.5353/th_b3955887
  2. b3955887
Identiferoai:union.ndltd.org:HKU/oai:hub.hku.hk:10722/52398
Date January 2007
CreatorsShi, Min, 施敏
ContributorsXie, MH
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Source SetsHong Kong University Theses
LanguageEnglish
Detected LanguageEnglish
TypePG_Thesis
Sourcehttp://hub.hku.hk/bib/B39558873
RightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works., Creative Commons: Attribution 3.0 Hong Kong License
RelationHKU Theses Online (HKUTO)

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