Return to search

Growth of AlInN and zinc blende GaN by molecular beam epitaxy

Thesis (M. Phil.)--University of Hong Kong, 2008. / Also available in print.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/225869596
Date January 2007
CreatorsShi, Min,
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
SourceClick to view the E-thesis via HKUTO

Page generated in 0.0022 seconds