The effect of silicon doping on the strain in c-plane InN films grown on c-plane GaN by plasma-assisted molecular beam epitaxy is investigated. Strain is measured by x-ray reciprocal space mapping and Raman spectroscopy. The silicon doping concentration of our sample is about 1018 cm-3 by Hall measurement. Relation between the strain and the silicon concentration is obtained. To understand the increase in tensile stress caused by Si doping is discussed in terms of a crystallite coalescence model.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0810110-170812 |
| Date | 10 August 2010 |
| Creators | Yen, Wei-chun |
| Contributors | Li-Wei Tu, Min-Hsiung Tsai, Yung-Sung Chen, Der-Jun Jang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0810110-170812 |
| Rights | not_available, Copyright information available at source archive |
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