The objective of this work was to study the noise in semiconductors and relate the transport mechanisms in the devices with the noise from the devices. The main part of the work was to set up a system for the measurement of noise in semiconductor devices. To establish the sensitivity of the system, it was calibrated at different temperatures. Some of the results from GaAs pn-junction showed some anomaly from that available in the literature. But certain points are yet to be clarified. This requires certain developments in the measurement system.
In the case of QWIPS structures, studies on some samples with varying number of wells are required and in order to study the GR noise spectra and other activated processes, we need to study the temperature dependence of the noise and a larger bias variation for studying the low frequency current noise.
| Identifer | oai:union.ndltd.org:IISc/oai:etd.ncsi.iisc.ernet.in:2005/312 |
| Date | 07 1900 |
| Creators | Choudhury, Palash Roy |
| Contributors | Krupanidhi, S B |
| Source Sets | India Institute of Science |
| Language | en_US |
| Detected Language | English |
| Type | Thesis |
| Rights | I grant Indian Institute of Science the right to archive and to make available my thesis or dissertation in whole or in part in all forms of media, now hereafter known. I retain all proprietary rights, such as patent rights. I also retain the right to use in future works (such as articles or books) all or part of this thesis or dissertation. |
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