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Substrate coupling macromodel for lightly doped CMOS processes

A scalable macromodel for substrate noise coupling in lightly doped substrates
with and without a buried layer has been developed. This model is based on
Z-parameters and is scalable with contact size and separation. This model requires
process dependent parameters that can be extracted easily from a small number of
device simulations or measurements. Once these parameters are known, the model
can be used for any spacing between the injecting and sensing contacts and for different
contact geometries. The model is validated with measurements for a lightly
doped substrate with a buried layer and predicts the substrate resistance values to
within 12%. The substrate resistances obtained using the model are also in close
agreement with the three-dimensional simulations for a lightly doped substrate. / Graduation date: 2003

Identiferoai:union.ndltd.org:ORGSU/oai:ir.library.oregonstate.edu:1957/31663
Date16 September 2002
CreatorsKoteeswaran, Mohanalakshmi
ContributorsMayaram, Kartikeya, Fiez, Terri
Source SetsOregon State University
Languageen_US
Detected LanguageEnglish
TypeThesis/Dissertation

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