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Materials research on metallized aluminum-nitride for microelectronic packaging

The use of aluminum nitride as a substrate material for microelectronics is examined. A brief look at thermal, mechanical, and electrical properties of aluminum nitride show that it is a viable alternative material for this use. A study of the interfaces between aluminum nitride and several thick film pastes (palladium silver conductor, ruthenium oxide resistor, and gold conductor) was performed with optical microscopy, scanning electron microscopy, and energy dispersive spectroscopy. Results of this investigation showed that the contaminants in the substrate material that affect thermal conductivity do not affect the adhesion of the thick film pastes. However, it was found that the lack of certain elements in the binder of the thick film paste could lead to weaker adhesion, and severe degradation of the thick film's adhesion during thermal cycling.

Identiferoai:union.ndltd.org:arizona.edu/oai:arizona.openrepository.com:10150/276913
Date January 1988
CreatorsNewberg, Carl Edward, 1962-
ContributorsRisbud, Subhash H.
PublisherThe University of Arizona.
Source SetsUniversity of Arizona
Languageen_US
Detected LanguageEnglish
Typetext, Thesis-Reproduction (electronic)
RightsCopyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author.

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