This diploma thesis deals with methodology of thin film thickness determination using X-ray radiation of silver anode which provides radiation with energy of 2984,3 eV. This energy is twice as high as the standard aluminium radiation which allows a measurement of new photoelectron lines with higher bonding energy and it also provides thanks to the higher photoelectron energy greater information depth. In order to get the right results it was necessary to calibrate the spectrometer Kratos Axis Supra in the silver anode mode first and found out the form of the transmission function. The determination of the thickness of the thin layer was demonstrated by the comparation of the ratio of different photoelectron lines intensities with the theoretical model. For that purpose was specifically used the Si 1s and Si 2p peak bound in the substrate in the Si-Si bonding or in the thin oxid layer in the Si-O bonding. The results show that for thin SiO2/Si film thickness determination is the best to use the intensity ratio of only one photoelectron line. A silver anode however provides greater information depth.
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:402568 |
| Date | January 2019 |
| Creators | Pokorný, David |
| Contributors | Šik, Ondřej, Polčák, Josef |
| Publisher | Vysoké učení technické v Brně. Fakulta strojního inženýrství |
| Source Sets | Czech ETDs |
| Language | Czech |
| Detected Language | English |
| Type | info:eu-repo/semantics/masterThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
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