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A study of ion implantation damage and its effects in silicon.

by Chan Kwok Wai. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1997. / Includes bibliographical references (leaves 93-95). / ACKNOWLEDGEMENT --- p.i / ABSTRACT --- p.ii / LIST OF SYMBOLS --- p.iii / LIST OF FIGURES --- p.v / LIST OF TABLES --- p.vi / Chapter CHAPTER ONE --- INTRODUCTION --- p.1 / Chapter CHAPTER TWO --- SURVEYS ON ION IMPLANTATION DAMAGE STUDY --- p.6 / Chapter 2.1 --- Introduction --- p.6 / Chapter 2.1.1 --- Basic Theory --- p.7 / Chapter 2.1.2 --- Amorphization --- p.9 / Chapter 2.1.3 --- Amorphous Layer Regrowth --- p.10 / Chapter 2.1.4 --- Point Defect Sources --- p.11 / Chapter 2.1.5 --- Types of Extended Defects --- p.11 / Chapter 2.2 --- Nature of Point Defects --- p.15 / Chapter 2.2.1 --- Important Parameters --- p.15 / Chapter 2.2.2 --- Vacancy Centers in Semiconductor --- p.16 / Chapter 2.2.3 --- Self-interstitial in Silicon --- p.17 / Chapter 2.2.4 --- Distribution of Excess Point Defects --- p.18 / Chapter 2.2.5 --- Energy Level of Defect Species --- p.19 / Chapter CHAPTER THREE --- EXPERIMENTAL METHOD --- p.21 / Chapter 3.1 --- Experimental --- p.21 / Chapter 3.2 --- Spreading Resistance Profiling --- p.25 / Chapter CHAPTER FOUR --- MODELING OF SPREADING RESISTANCE PROFILES OF ION-IMPLANTED DAMAGE IN SILICON --- p.29 / Chapter 4.1 --- Introduction --- p.29 / Chapter 4.2 --- Basic equation --- p.30 / Chapter 4.3 --- Formation of Model --- p.34 / Chapter CHAPTER FIVE --- RESULTS AND DISCUSSION --- p.37 / Chapter 5.1 --- Results --- p.37 / Chapter 5.2 --- Discussion --- p.55 / Chapter CHAPTER SIX --- CONCLUSION AND SUGGESTIONS OF FURTHER WORK --- p.58 / Chapter 6.1 --- Conclusion --- p.58 / Chapter 6.2 --- Suggestions of further work --- p.59 / APPENDIX A --- p.60 / APPENDIX B / SPREADING RESISTIVITY PROFILES --- p.62 / REFERENCE --- p.93

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_322725
Date January 1997
ContributorsChan, Kwok Wai., Chinese University of Hong Kong Graduate School. Division of Electronic Engineering.
Source SetsThe Chinese University of Hong Kong
LanguageEnglish
Detected LanguageEnglish
TypeText, bibliography
Formatprint, vi, 95 leaves : ill. ; 30 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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