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On the mechanisms of hydrogen implantation induced silicon surface layer cleavage

University, Diss., 2001--Marburg.

Identiferoai:union.ndltd.org:OCLC/oai:xtcat.oclc.org:OCLCNo/175152705
CreatorsHöchbauer, Tobias.
Source SetsOCLC
LanguageEnglish
Detected LanguageEnglish
TypeOnline-Publikation.

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