The work contained in this thesis is concerned with the elucidation of the growth mechanism responsible for the formation of silicon dioxide by plasma anodization. Three possible theories for the growth mechanism have been considered; namely, (1) the rate-limiting diffusion theory (2) the classical theory of high-field ionic conduction and (3) the impact ionization theory.
The verification of the applicability of any of the above three theories required the design and construction of (a) an in situ film thickness measuring system and (b) a plasma anodization system capable of controlling the substrate temperature.
The experimental data could not be accounted for by either the rate-limiting diffusion or high-field ionic conduction theories, but good agreement was found with predicted results from an impact ionization theory. The development of a suitable impact ionization theory yielded a value for the electron mobility in SiO₂ which was almost identical to the average value calculated from recent Hall effect measurements. / Applied Science, Faculty of / Electrical and Computer Engineering, Department of / Graduate
| Identifer | oai:union.ndltd.org:UBC/oai:circle.library.ubc.ca:2429/34363 |
| Date | January 1971 |
| Creators | Scholz, Frank Joseph |
| Publisher | University of British Columbia |
| Source Sets | University of British Columbia |
| Language | English |
| Detected Language | English |
| Type | Text, Thesis/Dissertation |
| Rights | For non-commercial purposes only, such as research, private study and education. Additional conditions apply, see Terms of Use https://open.library.ubc.ca/terms_of_use. |
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