Return to search

Defect studies of ion implanted silicon and silicon dioxide for semiconductor devices

We have studied the introduction of defects in silicon wafers with low dose channelling ion implantation. (For complete abstract open document)

Identiferoai:union.ndltd.org:ADTP/245546
CreatorsLay, Matthew Da-Hao
Source SetsAustraliasian Digital Theses Program
LanguageEnglish
Detected LanguageEnglish
RightsTerms and Conditions: Copyright in works deposited in the University of Melbourne Eprints Repository (UMER) is retained by the copyright owner. The work may not be altered without permission from the copyright owner. Readers may only, download, print, and save electronic copies of whole works for their own personal non-commercial use. Any use that exceeds these limits requires permission from the copyright owner. Attribution is essential when quoting or paraphrasing from these works., Open Access

Page generated in 0.0013 seconds